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| 2SK1947 Silicon N Channel MOS FET Application High speed power switching TO-3PL Features * * * * * Low on-resistance High speed switching Low Drive Current Built-In Fast Recovery Diode (trr = 140 ns) Suitable for Switching regulator, Motor Control 2 1 1 3 2 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 30 50 200 50 200 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK1947 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 25 A VGS = 10 V * ID = 25 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 25 A VGS = 10 V RL = 1.2 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.047 10 250 3.0 0.06 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 30 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 5810 2360 270 75 270 420 200 1.2 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 50 A, VGS = 0 IF = 50 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 140 -- ns -------------------------------------------------------------------------------------- 2SK1947 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) 1000 300 Drain Current I D (A) 100 30 10 200 Maximum Safe Operation Area 100 3 by R DS (on) 1 0.3 0.1 1m Op = s era 10 ms tio n( (1 T s Operation in this c = 25 hot) area is limited C ) DC PW 10 10 s 0 s Ta = 25C 1 3 10 30 100 300 1000 0 50 100 150 Case Temperature Tc (C) Drain to Source Voltage V DS (V) Typical Output Characteristics 100 10 V Drain Current I D (A) 80 60 40 20 8V Pulse Test Drain Current I D ( A ) 6V 40 30 20 10 50 Typical Transfer Characteristics VDS = 10 V Pulse Test 5.5 V 5V 4V VGS = 3.5 V 4 8 12 16 20 Tc = 25C 75C -25C 0 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 2SK1947 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS (on) (V) 5 Pulse Test 4 3 50 A 2 1 20 A I D = 10 A Static Drain to Source on State Resistance R DS (on) ( ) 0.5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.2 0.1 0.05 0.02 0.01 0.005 VGS = 10 V 0 4 8 12 16 20 2 5 10 20 50 100 200 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 0.20 Static Drain to Source on State Resistance R DS (on) ( ) Forward Transfer Admittance | yfs | (S) 0.16 0.12 I D = 50 A 0.08 10 A, 20 A 0.04 0 -40 Pulse Test VGS = 10 V 100 50 20 Forward Transfer Admittance vs. Drain Current Pulse Test V DS = 10 V Tc = 25C -25C 10 5 2 1 0.5 75C 0 40 80 120 160 1 2 5 10 20 50 Case Temperature Tc (C) Drain Current I D (A) 2SK1947 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time t rr (ns) 200 100 50 20 10 5 1 2 5 10 20 50 100 Reverse Drain Current I DR (A) 10 0 di/dt = 100 A/s V GS = 0, Ta = 25C 10000 Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) 1000 Coss 100 VGS = 0 f = 1 MHz 10 20 Crss 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) 400 300 VDS 200 100 VDD = 200 V 100 V 50 V 80 160 240 320 8 4 0 400 VDD = 200 V 100 V 50 V VGS 16 12 20 Gate to Source Voltage VGS (V) 1000 500 Switching Time t (ns) 200 100 50 20 10 0.5 Switching Characteristics td(off) tf tr ID = 50 A t d(on) VGS = 10 V, VDD = 30 V : PW = 2 s, duty < 1% = 1 2 5 10 20 50 0 Gate Charge Qg (nc) Drain Current I D (A) |
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